 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification 2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 5 0.650.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 1.90.1 +0.2 4 0.95 3 2 0.3 -0.05 0.40.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SD814 x 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 150 150 5 50 100 300 150 -55 to +150 Unit V V V mA mA mW C C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0 to 0.1 0.1 to 0.3 4 : Emitter 5 : Base (Tr1) EIAJ : SC-74A Mini Type Pakage (5-pin) Marking Symbol: 4O Internal Connection 5 4 3 2 Tr1 1 Tr2 s Electrical Characteristics Parameter Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Forward current transfer hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance *1 (Ta=25C) Symbol VCEO VEBO ICBO hFE hFE (small/large)*1 VCE(sat) fT Cob Conditions IC = 100A, IB = 0 IE = 10A, IC = 0 VCB = 100V, IE = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 150 2.3 90 0.5 0.99 1 V MHz pF min 150 5 1 450 typ max Unit V V A Ratio between 2 elements +0.1 1.450.1 s Features 1 Composite Transistors PT -- Ta 500 XN1507 IC -- VCE 120 Ta=25C 120 VCE=10V 100 25C Ta=75C 80 -25C IC -- VBE Total power dissipation PT (mW) Collector current IC (mA) 80 300 60 Collector current IC (mA) 12 400 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 60 200 40 0.2mA 20 40 100 20 0 0 40 80 120 160 0 0 2 4 6 8 10 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 100 hFE -- IC IC/IB=10 600 VCE=10V fT -- I E 200 VCB=10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 30 10 3 1 0.3 0.1 -25C 0.03 0.01 0.1 160 400 120 300 Ta=75C 25C 80 25C Ta=75C 200 -25C 100 40 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 0 -1 -2 -3 -5 -10 -20 -30 -50 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 5 Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25C 4 3 2 1 0 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 |
Price & Availability of XN1507
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |